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玻璃衬底上GaN和InN制备的研究

The Study of GaN and InN Deposition on Glass Substrate

作者: 专业:凝聚态物理学 导师:秦福文 年度:2010 学位:硕士  院校: 大连理工大学

Keywords

ECR-PEMOCVD, Glass Substrate, GaN, InN

        氮化镓(GaN)和氮化铟(InN)都属于Ⅲ/Ⅴ族直接带隙半导体,室温下禁带宽度分别是3.39eV和0.7eV。InN、GaN以及AlN(氮化铝)的合金可以实现直接带隙宽度从红外到紫外区的连续可调。所以在蓝、绿、紫外发光二极管(LED),激光二极管(LD)及太阳盲区紫外探测器等光电器件方面有重要的应用。另外,InxGa1-xN的合金在高效太阳能电池方面的应用也备受关注。目前常用的Ⅲ族氮化物半导体生长方法有:分子束外延(MBE)、金属有机物化学气相沉积(MOCVD)、氢化物气相外延(HVPE)等。其中MOCVD方法由于操作简单、制备的薄膜质量高和生长温度低等优点适于工业化批量生产。蓝宝石(a-Al2O3)、碳化硅(SiC)等常规衬底成本高、很难制造出大的面积。本文采用廉价的普通玻璃作衬底,可以降低衬底的成本且不受衬底面积的限制。在自行研制的电子回旋共振-等离子体增强MOCVD (ECR-PEMOCVD)设备上,以三甲基镓(TMGa)和三甲基铟(TMIn)为金属有机源(MO),高纯氢气(H2)为载气,高纯氮气(N2)为氮源,低温沉积高度c-轴择优取向的GaN和InN多晶。实验过程用反射高能电子衍射(RHEED)原位监测生长情况。采用X射线衍射(XRD)、RHEED、原子力显微镜(AFM)、透射光谱以及室温霍尔(Hall)测量对薄膜进行表征发现:衬底氮化时间会影响GaN的质量,氮化5min条件下沉积的GaN薄膜质量较好,其XRD半峰宽(FWHM)最小,为0.19°,平均晶粒尺寸最大,约为44nm;随着TMGa流量的增大,GaN薄膜的质量先增高后降低,TMGa流量为1.4sccm条件下沉积的GaN薄膜质量较好;改变InN的沉积温度,实验发现450℃左右沉积的InN质量较好,XRD曲线上未看到金属In的衍射峰。
    As members ofⅢ/Ⅴnitrides family, GaN(Gallium Nitride) and InN(Indium Nitride) have direct room-temperature bandgaps of 3.4eV and 0.7eV. InN alloyed with GaN and A1N may span a continuous range of direct bandgap energies through much of the visible spectrum well into the UV(Ultraviolet) wavelengths, which makes it attractive for optoelectronic device applications, such as blue-green-UV LED(light-emitting diodes), LD(laser diodes) and solar-blind UV detector and so on. In addition, the potential of InxGa1-xN alloys on the fabrication of high efficiency solar cell has attracted much attention.Nowadays the widely used methods in the deposition of III-nitides Include:Molecular Beam Epitaxy (MBE)、Metal Organic Chemical Vapor Deposition (MOCVD)、Hydride Vapor Phase Epitaxy (HVPE)and so on. Becuse of its easy contral、relatively high quality of the epitaxy film a, MOCVD is more suitable for large-scale production.The conventional substrates used for GaN and InN deposition like Sapphire (α-Al2O3) and Carborundum (SiC) are expensive and difficult to make large surface area. In this work we use conventional glass as substrate, which greatly decrease the cost of experiment without considering the ara of substrates. With TMGa and TMIn as metal organic (MO) sources, high purity Hydrogen (H2) as carrier gas and high purity Nitrogen (N2) as N source, highly c-axis orientation GaN and InN were prepared by Electron Cyclotron Resonance-Plasma Enhanced MOCVD (ECR-PEMOCVD) system at low temperature. The deposition of GaN and InN film were monitored with in situ RHEED system.The X-Ray diffraction(XRD), RHEED, Atomic Force Microscope (AFM), Ttransmission Spectrum, and Hall measurements wered used to study the films deposited at various condition. And the results find out that:The substrate nitride time would affect the the quality of GaN film, the film deposited with substrate nitrided for 5 min is of high c-axis preferred orientation and highly crystallined, with the Full Width at Half Maximum (FWHM) of (002) reflection only 0.19°; as the Trimethyl-gallium (TMGa) flow increase, at first the crystallization of GaN film improve with the flow of 1.4sccm the best, futher increase the TMGa flow, the film would degrade; varied the InN deposition temperature, the results show GaN deposited at 450℃is of the best qualiy, and no metal In phase on XRD spectrum were inspected.
        

玻璃衬底上GaN和InN制备的研究

摘要4-5
Abstract5
1 绪论8-14
    1.1 研究课题介绍8-10
        1.1.1 GaN发展历史8-9
        1.1.2 InN发展历史9-10
    1.2 取题意义10-14
        1.2.1 太阳能电池工作原理10-12
        1.2.2 InN、GaN及其合金在太阳能电池中的应用12-13
        1.2.3 取题意义13-14
2 薄膜的生长概述14-17
    2.1 薄膜成核理论14-15
    2.2 影响薄膜成核和结构的因素15-17
        2.2.1 衬底材料15
        2.2.2 缓冲层的制备15
        2.2.3 沉积温度15-16
        2.2.4 反应源流速16
        2.2.5 微波功率16-17
3 实验设备和样品检测17-30
    3.1 RHEED原位监测ECR-PEMOECVD设备介绍17-21
    3.2 有机源、氮源和载气的选择21-22
    3.3 样品检测方法22-30
        3.3.1 RHEED22-23
        3.3.2 XRD23-25
        3.3.3 原子力显微镜25-26
        3.3.4 霍尔效应和迁移率测量26-28
        3.3.5 透射谱28-30
4 GaN薄膜的制备研究30-40
    4.1 氮化时间对GaN薄膜的影响30-34
        4.1.1 实验过程30
        4.1.2 实验分析30-34
    4.2 TMGa流量对GaN沉积的影响34-38
        4.2.1 实验过程34
        4.2.2 结果讨论34-38
    4.3 小结38-40
5 沉积温度对InN质量的影响40-44
    5.1 实验过程40
    5.2 结果讨论40-43
    5.3 小结43-44
结论44-45
参考文献45-48
攻读硕士学位期间发表学术论文情况48-49
致谢49-51
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