氧化钛基光电子器件

Titanium Dioxide-Based Optoelectronic Devices

作者: 专业:光学 导师:马凤英 年度:2010 学位:硕士  院校: 郑州大学

Keywords

Titanium dioxide, MISIM photodetector, Photovoltaic behavior, Isotype heterojunction

        氧化钛(TiO2)是一种间接带隙的宽禁带半导体材料。由于在物理、化学、光学等方面具有优良的特性,氧化钛在光催化、敏化太阳能电池以及传感器等许多领域都得到了广泛的研究。本论文是在总结了氧化钛薄膜和相关器件研究现状的基础上,开展了氧化钛相关的光电子器件的研究。取得的主要研究结果如下:1.用原子层沉积方法(ALD)在石英衬底上生长氧化钛薄膜,并在此薄膜上制备了金属-绝缘层-半导体-绝缘层-金属(MISIM)和金属-半导体-金属(MSM)结构的光电探测器。对两种不同结构的紫外探测器进行了光学和电学性能测试和研究。发现MISIM结构的紫外探测器的光响应与MSM结构的紫外探测器光响应相比得到了明显地改善。分析表明这是由于载流子在绝缘层中发生碰撞离化而导致载流子倍增的结果,以上结果为实现高性能的氧化钛基光电探测器打下了基础。2.用原子层沉积的方法(ALD)在n型硅衬底上生长了氧化钛薄膜,制备了n-Si/n-TiO2同型异质结,发现该结构中存在明显的光伏效应,其开路电压为123 mV,短路电流为20μA/cm2,光电转换效率为0.00051%。这种在氧化钛同型n-n结中发现光伏效应以往尚无报道,该工作为未来实现简单便宜的光伏器件提供了一种可能。
    Titanium dioxide (TiO2) is an indirect bandgap semiconductor. Because of its unique properties in physics, chemistry, optics etc., TiO2 has been studied extensively for the applications in photocatalysis, solar cells and sensors, etc. In this thesis, by summarizing the study of titanium oxide film and related devices, titanium oxide-related optoelectronic devices were studied, and the main results are listed below:1. The TiO2 films were prepared on glass substrates in an atomic layer deposition (ALD) technique. Then a metal-insulator-semiconductor-insulator-metal (MISIM) structured ultraviolet photodetector was prepared on the films. Meanwhile, a metal-semiconductor-metal (MSM) structured photodetector was also fabricated under the same conditions for comparison. The responsivity of the MISIM structured photodetector is effectively improved compared with the MSM structured photodetector. It is shown that the improvement can be attributed to the carrier multiplication process occurred in the insulator layer under high electric field. The results may open a door for high performance titanium dioxide based photodetectors.2. An n-TiO2/n-Si isotype heterojunction has been fabricated by depositing TiO2 thin films onto n-Si substrates in an atomic layer deposition technique. Obvious photovoltaic behaviors have been observed in this isotype heterojunction. The open circuit voltage and short circuit current can reach 123 mV and 20μA/cm2, respectively, and the conversion efficiency is about 0.00051%. The photovoltaic behaviors found in the titanium-based isotype heterojunction have not reported before, and this work may provide a possible route to simple and cheap photovoltaic devices.
        

氧化钛基光电子器件

摘要4-5
Abstract5
目录6-8
第1章 引言8-22
    1.1 氧化钛的晶体结构和基本性质9-12
        1.1.1 TiO_2的晶体结构9-10
        1.1.2 能带理论以及TiO_2的能带结构10-12
    1.2 光电探测器12-20
        1.2.1 半导体光电探测器一些重要的特性参数12-15
        1.2.2 光子探测器的分类与特性15-17
        1.2.3 几种最常用的光伏探测器17-20
    1.3 选题依据和论文内容20-22
第2章 薄膜的制备方法和相关表征手段22-36
    2.1 薄膜的制备方法22-27
        2.1.1 原子层沉积法22-24
        2.1.2 磁控溅射技术24-26
        2.1.3 常规真空热蒸发26-27
    2.2 紫外探测器件的制备工艺27-29
        2.2.1 金属电极的溅射27
        2.2.2 光刻过程27-29
    2.3 薄膜性质表征手段介绍29-34
        2.3.1 X射线衍射谱29-30
        2.3.2 光谱测量30-31
        2.3.3 原子力显微镜(AFM)31-32
        2.3.5 扫描电子显微镜(SEM)32-34
    2.4 光电探测器件性能测试方法介绍34-36
        2.4.1 光谱响应曲线测量系统34
        2.4.2 常规电学测量操作规程34-36
第3章 氧化钛金属-绝缘层-半导体-绝缘层-金属(MISIM)结构探测器的制备与特性36-43
    3.1 强电场下的热载流子效应36-37
    3.2 氧化钛金属-绝缘氧化物-半导体-绝缘氧化物-金属(MISIM)结构紫外探测器的制备37-38
    3.3 氧化钛金属-绝缘氧化物-半导体-绝缘氧化物-金属(MISIM)结构紫外探测器的性能研究38-42
    3.4 本章小结42-43
第4章 n-Si/n-TiO_2型同型异质结光伏效应器件43-50
    4.1 异质结的概述43-44
    4.2 异质结的光伏效应44-45
    4.3 n-Si/n-TiO_2同型异质结光伏器件的制备45-46
    4.4 n-Si/n-TiO_2同型异质结光伏器件的光电性质研究46-49
    4.5 本章小结49-50
第5章 全文总结与展望50-51
参考文献51-55
致谢55-56
个人简历及在学期间发表的学术论文与研究成果56
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